RIE reactive ion etching / deposition RIE plasma processing system and a plasma enhanced chemical ..

Products: BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing systems, reactive ion etching (RIE) and plasma-enhanced chemical vapor deposition (PEVCD) system for reactive ion etching (RIE) and plasma enhanced chemical vapor deposition (PEVCD) plasma processing system. BM8-II is a definition of reactive ion etching (RIE) and plasma-enhanced chemical vapor deposition (PEVCD), plasma processing new concept of a plasma processing system. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system based on a modular design and manufacturing, using a universal vacuum treatment tanks and cabinets. Plasma processing system using flat electrodes, reactive ion etching (RIE) electrode and a plasma-enhanced chemical vapor deposition (PEVCD) electrode modular design, easy assembly and configuration of the overall system. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system gives the user easy to operate, it offers a variety of plasma processing technology, easy maintenance and cost-effective reactive ion etching (RIE) / deposition plasma processing system, Industry other than reactive ion etching (RIE) / deposition (PEVCD) plasma processing system more competitive. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system - developed major performance profile of plasma treatment process requires versatile and reliable plasma processing system. In order to meet the ever-changing demands of plasma research, systems users to buy equipment to meet the widest range of plasma process parameters necessary process validation requires extremely high repeatability must facilitate the transformation for a new plasma process needs. We believe BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system series dry process plasma system to meet these very demanding requirements. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system is a tool for plasma systems research, process development and small batch production for accurate maximum eight-inch plasma etching the substrate and deposition. BM8-II reactive ion etching (RIE) / deposition (PEVCD), plasma processing system may operate in a multi-chip or single-chip processing mode. At the beginning of the design BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing systems, leading instruction it is to create a fusion of high-quality, reliable, repeatable and production systems for process control as one of the plasma system; while greatly reducing host costs, maintenance costs and small footprint requirements. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system has a unique body structure and electrode design, easy installation module or in a laminar flow clean room. Built BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system using high quality components approved, modular assembly, multifunction vacuum pods and electrode design, compact, automation and field-proven technology program so BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system has become the preferred process engineers dry plasma processing equipment. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system - one of the main performance presentation vacuum pods constructed in situ electrode spacing design (PEVCD version) can replace a process gas nozzle field-proven technology???? program? The main component of high-quality industry-accepted? endpoint detection monitoring (Endpoint detection optional)? multiple electrode configuration? automatic radio frequency (RF) matcher? downstream pressure control (Downstream pressure control optional)? computer control, Windows-based programming ?? a variety of vacuum pump Optional: mechanical pump, mechanical pump / blower, turbo booster pump single vacuum chamber and double vacuum tank structure BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing systems - Application Based on high-quality processing module system construction, BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing systems to meet a wide range of plasma processing conditions, ranging from complex submicron reactive ion etching (RIE) or quality plasma enhanced chemical vapor deposition deposition (PEVCD) film. The following is our close collaboration typical Process Applications BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system, base and large customer base, we have developed a field-proven technology program to ensure that the system meets user required. System equipment are used for manufacturing the highest quality components to ensure, BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing systems to provide maximum possible uptime, reliability, repeatability and durability . ? Fault analysis (Failure analysis)? Material Modification (Material modification)? Adhesion-promoting plasma descum? Surface treatment (Surface treatment)? Isotropic and anisotropic etching (Anisotropic and isotropic etching)? Metal etching ( Metal etching)? Si02 (silicon dioxide), Si3N4 (silicon oxide) and SiOxNy (N silicon oxide) film deposition? II-V etch applications (III-V etching)? trench etch (Trench etching)? passivating etch (Passivation etching)? etched polyimide (Polyimide etching)? Subnanometer etching (Submicron etching) BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system specifications BM8-II widespread use of reactive ion etching (RIE) / deposition (PEVCD) plasma processing system due to its high cost, functional design modules that provide other similar reactive ion etching (RIE) / deposition (PEVCD) plasma processing system is not the process advantages. These include laminar flow installation footprint variety of electrode configurations, and can meet the maximum diameter of 8 inches (203 mm) of the substrate processing. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system basic module BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system basic components include a Windows-based PC controller and Its menu storage, two-way control channel mass flow controller (expandable up to six channels), temperature compensated manometer for measuring the degree of vacuum technology, 100 mm vacuum channel for maximum process gas conductance, KF or ISO standard fittings ease of maintenance; and other technology and service features. The process gas ductus stainless steel operations, with VCE connections. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing systems - vacuum processing tank vacuum processing tank BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system uses single block of aluminum construction resulting in one-piece design. Reactive ion etching (RIE), plasma-enhanced chemical vapor deposition (PEVCD) and flat electrode systems are using the same vacuum processing tank design. The upper portion of the vacuum processing tank comprises an electrode and having an adjustable situ electrode spacing; lower vacuum tank comprises a substrate electrode, a vacuum pump and a gas interfaces necessary vacuum valve and vacuum monitoring equipment. Automatic lifts lifting the upper vacuum chamber easily accessible bottom electrode. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing systems - electrode configuration reactive ion etching (RIE) series electrodes especially low vacuum range to achieve optimal plasma performance design. An upper electrode comprises a stainless steel nozzle type process gas supply system. Stainless steel bottom electrode through the optional cooling cycle trough to control the temperature. Reactive ion etching (RIE) using dark barrier anode design, the plasma between the two electrodes. Plasma enhanced chemical vapor deposition ((PECVD) using a similar electrode design, but the bottom of the aluminum substrate electrode 400 ℃ maximum temperature resistant, and the upper electrode (the conducting electrode) is the use of water cooling. Aluminum electrode having a gas sensing port, to facilitate rapid cooling after the deposition process. For (plasma enhanced chemical vapor deposition (PECVD) applications, the spacing between the upper electrode can be adjusted from 25.40 to 89 mm. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing systems - power plasma power BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system to match a wide range of power and plasma power frequency all power solid state, air-cooled electrical power from. 300-1250 watts are RF frequencies from 40KHz (IF) to 2.45GHz (microwave);.. system comes standard 13.56MHz, 600 瓦特 RF power supply optional automatic or manual matcher BM8-II reactive ion etching ( RIE) / deposition (PEVCD) plasma processing systems - Process vacuum pump according to the process needs of the user, BM8-II reactive ion etching (RIE) / deposition (PEVCD), plasma processing systems equipped with a mechanical pump, mechanical pump and a turbo molecular pump, . mechanical pump or Roots blower belt may also be equipped with different sizes depending on the desired level of vacuum pumps, vacuum processing BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing systems - Controller controller uses Computer control of the entire system, Windows-based control software features a multi-screen display system equipment control, data logging, call settings and storage, the system should be equipped with chains. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma treatment System - Optional BM8-II in order to enhance reactive ion etching process processing capability (RIE) / deposition (PEVCD), plasma processing system, BM8-II reactive ion etching (RIE) / deposition (PEVCD), plasma processing system provides a wide range of Process options, including end-point detection, water (for cooling the electrodes), and purge oil mist separator system, pressure control next week, hard-anodized vacuum chamber. Process waste gas treatment system is also available should Ion Etching (RIE) / plasma-enhanced chemical vapor deposition (PEVCD) any combination of double vacuum processing tank can be configured. reactive ion etching (RIE) / plasma-enhanced chemical vapor deposition (PEVCD) configured obvious combination of versatility, which the advantage is to avoid cross-contamination of different deposition processes. BM8-II reactive ion etching (RIE) / deposition (PEVCD) plasma processing system size single vacuum processing tank Dual double vacuum treatment tanks 104 cm width 91 cm depth 81 cm height 114 cm cabinet Overall height 91 cm 91 cm 129 cm 129 cm BM8-II reactive ion etching (RIE) / deposition (PEVCD), plasma processing system 70 by weight to 120 kg (depending on the system configuration). BM8-II RIE (RIE) / deposition (PEVCD) plasma processing system installation conditions plasma system host: 220VAC / 1 / 50Hz, 7A vacuum pump system: 220VAC / 1 / 50Hz, 5A electrode cooling water: 20 ℃ ± 2 ℃ vacuum valve drive gas source: 0.88MPa nitrogen: 0.1 ~ 0.14MPa (for vacuum processing tank purge) gas source: gas plasma treatment process, VCR fittings If you are interested TUNGROMA reactive ion etching (RIE) / deposition (PEVCD) plasma processing system, Contact us for more detailed information Rome Technology (Beijing) Co., Ltd. (Materials Science Department) Tel: 010-57130073 13910046648 Fax: 010-58144085 QQ: 70609221 E-mail: sale@tungroma.com Website: www.tungroma.com