Supply of ion milling testing and application

Ion milling machine application Cross section Polisher (CP) CP application describes sample preparation for SEM, EPMA (Electron Probe instrument) and SAM, which can be prepared soft, hard, and sample composite material damage, contamination and deformation can control was very small. Samples were prepared relying on the ion beam bombardment profile, large viewing range, clean and suitable for almost all materials. Main features: CP can be prepared in one step mirror samples. It can almost be applied to a variety of materials, including the difficulty of polishing soft materials, such as copper, aluminum, gold, solder and polymers; and it is difficult to cut materials, such as ceramics and glass. Supporting advanced CCD microscope, the sample can be accurately positioned in the section on the position of a few microns in size. Preparation process, automatic swing control sample, in order to avoid scratching the surface. Due to the level of the incident ion beam, argon ions do not penetrate the surface of the sample. Major equipment on a single instrument to achieve the two grinding plane and cross-sectional manner; grinding speed, cross-sectional polishing rate was 300μm / h (Si film); a large working area, surface grinding process diameter region of 5mm maximum processing speed 2μm / h; can put large sample volume, cross-sectional sample: 20 (W) × 12 (D) × 7 (H) mm, flat samples: Φ 50 × 25 (H) mm; facilitate the cross-sectional sample stage plane and demolition, demolition After accurate adjustment; the sample stage with all SEM Hitachi Universal. Major equipment JEOL ion acceleration voltage 2 ~ 6kV (average of 2 hours, the acceleration voltage: 6kV, silicon conversion, edge distance: 100μm) ion beam diameter 500μm (FWHM) polishing rate 100μm / H equipped with the maximum sample size 11mm (width) × 10mm (length) × 2mm (thickness) sample moving range of X-axis ± 10mm Y-axis ± 10mm sample rotation angle adjustment range ± 5o sample processing swing angle ± 30o patent pending) method of operation touch panel using a gas of argon (by the mass flow controller controls the flow rate) Pressure test Penning gauge main evacuation means evacuating turbo molecular pump auxiliary means mechanical pump size / weight of the host 545 mm (width) × 550 mm (length) × 420 mm (height) 64kg mechanical pump 150 mm (width) × 427 mm (length) × 230.5 mm (height) 16kg Option 8 kV accelerating voltage unit, rotating sample stage, high-precision positioning grinding CCD camera mode 1, 2 plane grinding, polishing sectional polishing rate: 2 μm / h (incident angle: 60 °; eccentricity amount: 4mm) Maximum Sample Size: Φ 50 × 25 (H) mm polishing rate: 300 μm / h (in a standard Si wafer, grinding thickness 100μm) Maximum Sample Size: 20 ( W) × 12 (D) × 7 (H) mm