Low-power high-frequency magnetic reluctance sensor switch MRS201

MRS201 low-power high-frequency all-pole switched reluctance magnetic sensor MRS201 is an integrated tunnel magnetoresistance (TMR) sensor and CMOS technology, high sensitivity, high speed, low power, high precision applications and the development of an all-pole magnetic switch. MRS201 using high-precision push-pull half-bridge TMR magnetic sensor and CMOS integrated circuits, including TMR voltage generator, comparator, Schmitt trigger, and CMOS output circuit, magnetic field can change the signal into digital voltage output. MRS201 to provide temperature compensated supply through internal voltage regulator, and allow a wide operating voltage range. MRS201 low voltage, high frequency response microamps of supply current, wide operating temperature range the ideal choice for many low-power applications. MRS201 in two packages: SOT23-3, and TO-92S full-low-power high-frequency magnetic switch (Hall switch) Basic parameters Operating voltage: 1.8-5.5V 100KHZ average power 5UA switching frequency Operating temperature: -40 to 125 MRS201 low power all-pole switched reluctance magnetic sensor product features: l tunneling magnetoresistance (TMR) technology bipolar latch type switch l l High sensitivity, ultra low power consumption low switching point l l l Wide operating voltage range l Excellent temperature stability and high-speed magnetic field detection frequency response l excellent ESD protection performance full low-power high-frequency magnetic switch (Hall switch) MRS201 low power all-pole switched reluctance magnetic sensor Typical applications: l solid state switching speed detection l l l Metering rotational position detection of the product produced by the HALLWEE Hall microelectronics offer, specialized in the Hall IC, Hall switch development of production, to provide you with professional service! Hallwee magnetic sensing element is a Hall effect device brands