Used QT2 transistor characteristics Tracer measurement semiconductor diodes, transistors tester

QT2 transistor curve tracers can be measured according to the semiconductor diodes, transistors and low-frequency dc parameters. Maximum collector current of up to 50A, basically meet the test of the semiconductor tube 500W or less. With high-pressure testing capabilities, can 3KV (5KV) \ Semiconductor tube below the breakdown voltage and reverse leakage current test, the test current maximum sensitivity can reach 0.5uA / degree. Base ladder ladder has a pulse output signal, measurable secondary breakdown characteristics. Features: high-power device testing, IGBT module test tube test MOS professional sales / purchase / maintenance, leasing second-hand equipment Phone: 13005433157/13798360277 Li Hanming, 13713875417 Ms. Tseng, QQ308966 Collector scan signal (output voltage range / current capacity) and the transistor Diodes 0 ~ 10V / 50A (pulse step) 20A (mean) 0 ~ 50V / 10A (mean) 0 ~ 100V / 5A (mean) 0 ~ 500V / 0.5A (average) diode high voltage test 0 ~ 5KV ( 3KV) / 5mA (max.) base the staircase ladder current: 1uA ~ 200mA / grade, sub-17 file ladder voltage: 0.05 ~ 1V / grade 5 steps staircase shape: normal (100%), pulses (10 to 40% ) Y-axis deflection factor collector current: 1uA ~ 5A / degrees, minutes 21 stalls diode current: 1 ~ 500uA / div, points and nine stalls collector and the diode current rate: × 0.5 X axis deflection factor collector voltage: 10mV ~ 50V / degrees, minutes 12 stalls diode current: 100 ~ 500V / degrees, 3-speed base electrode voltage: 10mV ~ 1V / degrees, minutes and 7-speed general performance of the effective display surface 10 × 10div (1div = 0.8cm) Apparent power of about 80VA about 300VA (maximum power) Dimensions 30 × 40 × 52cm Weight 30kg reverse breakdown voltage test VCBO collector - base (open emitter) VEBO Emitter - base (open collector) VCEO Collector - emitter ( base open) VCER collector - emitter (base resistor connected between the emitter) VCES collector - emitter (emitter-base short-circuits) a variety of characteristic curves VCE - IC common emitter (base signal is variable ) IB - IC common emitter VBE - IB common emitter VBE - IO common emitter